\begin{table}[hbpt!]
\begin{tabular}{|c|c|c|c|c|}
\hline
\textbf{Synthesis} &
\textbf{Technique} &
\textbf{Product} &
\textbf{Temperature (°C)} &
\textbf{properties} \\ \hline
\multirow{4}{*}{SiC powders} & Reduction of silica by carbon & $\beta$-SiC & 1800 & Fine powder \\ \cline{2-5}
& Siliconization of carbon & $\beta$-SiC & 1380 or 1200-300 & Coarse powder \\ \cline{2-5}
& Chemical vapor deposition (CVD) & $\beta$-SiC & - & Fine powder \\ \cline{2-5}
&
\begin{tabular}[c]{@{}c@{}}Liquid-phase raw materials\\ and precursor method\end{tabular} &
$\beta$-SiC &
1600-1800°C &
Fine powder \\ \hline
\multirow{5}{*}{SiC in bulk} & Lely method & $\alpha$-SiC & $\sim$2700°C & Large single crystals \\ \cline{2-5}
& Molten metal method & Polytypes & High Temperature & Inorganic crystals \\ \cline{2-5}
& \multirow{2}{*}{Chemical vapor deposition (CVD)} & $\alpha$-SiC & 2000-2300°C & single crystals \\ \cline{3-5}
& & $\beta$-SiC & \textless{}2000°C & single crystals \\ \cline{2-5}
& Aqueous solution method & SiC & - & Polycrystalline films \\ \hline
\end{tabular}
\caption{Classification of methods for SiC synthesis (powders and bulk) \cite{3}}
\label{tab:1}
\end{table}
答案1
我建议允许在第 2、4 和 5 列自动换行。这可以通过使用环境来实现tabularx
;请参阅下文了解具体实现。我还将使用悬挂缩进,以便更容易看到单元格的位置。
此外,我建议您删除\multirow
指令,并用(垂直)空格替换所有\cline
指令,以便让表格看起来更加开放和吸引人。另外,请考虑使用booktabs
包中的线条绘制宏,而不是基本\hline
宏\cline
。
\documentclass{article}
\usepackage[T1]{fontenc}
\usepackage{tabularx,ragged2e,booktabs}
\newcolumntype{L}{>{\RaggedRight\hspace{0pt}\hangindent=0.75em\hangafter=1}X}
\newlength\mylen
\settowidth\mylen{Polytypes} % measure width of column #3
\begin{document}
\begin{table}[hbpt!]
\setlength\tabcolsep{3pt} % default: 6pt
\begin{tabularx}{\textwidth}{@{} l L p{\mylen} L L @{}}
\toprule
\textbf{Synthesis} &
\textbf{Technique} &
\textbf{Product} &
\textbf{Temperature} &
\textbf{Properties} \\
\midrule
SiC powders
& Reduction of silica by carbon
& $\beta$-SiC
& 1800°C
& Fine powder \\
\addlinespace
& Siliconization of carbon
& $\beta$-SiC
& 1380°C or \mbox{1200--1300°C}
& Coarse powder \\
\addlinespace
& Chemical vapor deposition (CVD)
& $\beta$-SiC & -- & Fine powder \\
\addlinespace
& Liquid-phase raw materials and precursor method
& $\beta$-SiC
& 1600--1800°C
& Fine powder \\
\midrule
SiC in bulk
& Lely method
& $\alpha$-SiC
& $\approx$2700°C
& Large single crystals \\
\addlinespace
& Molten metal method
& Polytypes
& High temperature
& Inorganic crystals \\
\addlinespace
& Chemical vapor deposition (CVD)
& $\alpha$-SiC \newline $\beta$-SiC
& 2000--2300°C \newline $<$\,2000°C
& single crystals \newline single crystals \\
\addlinespace
& Aqueous solution method
& SiC
& --
& Polycrystalline films \\
\bottomrule
\end{tabularx}
\caption{Classification of methods for SiC synthesis (powders
and bulk) \cite{3}}
\label{tab:SiC_methods}
\end{table}
\end{document}